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Researchers Overcome Show Stopping Problems With Ferroelectric Ram

Small or big both type of storage units have a long history of technological advancement over the period of time. It all started with a square floppy disk that had only 1.5MB of marketed capacity to store data. Requirement is changed and so, is the ever changing technology. Now NAND flash is a storage solution that has been in market for almost 5 years. This solution is indeed for handful of people because of high cost range. Consumer market is well aware of the fact that NAND flash is known for consuming power. They have a serious thought towards having an authentic and more practical solution. In longer version of the game NAND flash is famous for having scaling and reliability issues. Geeks of the field gave serious boost to their research for alternative storage mediums that can hold data for longer period of time and consume nominal power to execute read/write sequencing. This will for sure destroy the tenacity that holds NAND technology in the market place.

A solid in-depth research leads to perfect alternative solution. This research work gave birth to Ferroelectric RAM which is the next best thing in the market. It is not just talk of the town but does hold a well thought out plan behind its functionality. The whole mechanism is programmed to consume less power for read/write sequences. It performs the read/write cycle in just 10 nanoseconds with 3.3V whereas NAND takes longer period of time and consume about 10-15V. A team of technical analysts from UC Berkeley overcomes the show-stopping problem that is destructive read issue with ferroelectric RAM. It is made of Bismuth ferrite and in a very awkward manner it gives off voltage when stuck by light. Another interesting thing about this conventional RAM is that there is no Read cycle but just read/write cycle. Something that is still not being addressed is the storage density issue. It still remains as an enormous problem. To improve power efficiency the UC Berkeley team made use of array of light to illuminate more than one cell at a time.

The NAND technology is left way back on the race course. It is not an up-to-date match for the latest requirements of the user. Scaling concerns brings trust issues among the manufacturers. 3D NAND is the only supporting wall for the old conventional falling idea in the market. This indeed is a solution to improve chip densities and drive lower prices without necessarily moving to new process nodes. The giants of the industry are inclined towards blended process nodes. Innovative structures for long term purpose are required that can continue scaling where silicon is of no use. End of the day ferroelectric RAM may not be the solution we all are looking for or in other words it will not stand as a successor to the flash memory but the efficient research work done in these areas will eventually lead us to post CMOS- scaling. The research is for sure one step towards some ideal innovative solution.